IXFN36N110P

new-10%

Manufacturer part number:IXFN36N110P

Manufacturer:IXYS

Description:MOSFET N-CH 1100V 36A SOT-227B

Case Package:SOT-23

Datasheet:IXFN36N110P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	Polar™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1000W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1kW
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	350nC @ 10V
Rise Time	54ns
Drain to Source Voltage (Vdss)	1100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	94 ns
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.1kV
Pulsed Drain Current-Max (IDM)	110A
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant