IXFN38N80Q2

new-10%

Manufacturer part number:IXFN38N80Q2

Manufacturer:IXYS

Description:MOSFET N-CH 800V 38A SOT-227

Case Package:SOT-23

Datasheet:IXFN38N80Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Resistance	220MOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Power Dissipation-Max	735W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	735W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8340pF @ 25V
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	38A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free