IXFN44N50Q

new-10%

IXFN44N50Q

Manufacturer part number:IXFN44N50Q

Manufacturer:IXYS

Description:MOSFET N-CH 500V 44A SOT-227B

Case Package:SOT-23

Datasheet:IXFN44N50Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	3
Weight	44g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	Screw
ECCN Code	EAR99
Resistance	120mOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	176A
Dual Supply Voltage	500V
Avalanche Energy Rating (Eas)	2500 mJ
Isolation Voltage	2.5kV
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant