Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXFN73N30

IXFN73N30

IXFN73N30

IXYS

N-Channel Tube 45m Ω @ 500mA, 10V ±20V 9000pF @ 25V 360nC @ 10V SOT-227-4, miniBLOC

SOT-23

IXFN73N30 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2001
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Resistance 45mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 300V
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 73A
Pin Count 4
JESD-30 Code R-PUFM-X4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 73A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 292A
Dual Supply Voltage 300V
Recovery Time 200 ns
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $21.23000 $21.23
10 $19.30000 $193
30 $17.85267 $535.5801
100 $16.40500 $1640.5
250 $14.95752 $3739.38
500 $13.99250 $6996.25
IXFN73N30 Product Details

IXFN73N30 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 292A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFN73N30 Features


a continuous drain current (ID) of 73A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 292A.
a threshold voltage of 4V


IXFN73N30 Applications


There are a lot of IXYS
IXFN73N30 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News