IXFN80N50Q3

new-10%

Manufacturer part number:IXFN80N50Q3

Manufacturer:IXYS

Description:MOSFET N-CH 500V 63A SOT-227

Case Package:SOT-23

Datasheet:IXFN80N50Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount, Panel, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	780W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	780W
Case Connection	ISOLATED
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	63A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	250ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	63A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.065Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	5000 mJ
Height	9.6mm
Length	38.23mm
Width	25.07mm
RoHS Status	ROHS3 Compliant