IXFP4N100PM

new-10%

Manufacturer part number:IXFP4N100PM

Manufacturer:IXYS

Description:DISCMOSFETN-CH HIPERFET-POLA TO-

Case Package:SOT-23

Datasheet:IXFP4N100PM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2008
Part Status	Active
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	40W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1456pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.1A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	2.5A
Pulsed Drain Current-Max (IDM)	8A
DS Breakdown Voltage-Min	1000V
Avalanche Energy Rating (Eas)	200 mJ