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IXFT26N50Q TR

IXFT26N50Q TR

IXFT26N50Q TR

IXYS

MOSFET N-CH 500V 26A TO268

SOT-23

IXFT26N50Q TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HiPerFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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