IXFV36N50P

new-10%

Manufacturer part number:IXFV36N50P

Manufacturer:IXYS

Description:MOSFET N-CH 500V 36A PLUS220

Case Package:SOT-23

Datasheet:IXFV36N50P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3, Short Tab
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarP2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	36A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	540W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	540W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	170m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.17Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	90A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free