IXFX220N17T2

new-10%

Manufacturer part number:IXFX220N17T2

Manufacturer:IXYS

Description:MOSFET N-CH 170V 220A PLUS247

Case Package:SOT-23

Datasheet:IXFX220N17T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	GigaMOS™, HiPerFET™, TrenchT2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.3m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	31000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	220A Tc
Gate Charge (Qg) (Max) @ Vgs	500nC @ 10V
Drain to Source Voltage (Vdss)	170V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	220A
Drain-source On Resistance-Max	0.0063Ohm
Pulsed Drain Current-Max (IDM)	550A
DS Breakdown Voltage-Min	170V
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant