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IXGM25N100A

IXGM25N100A

IXGM25N100A

IXYS

Trans IGBT Chip N-CH 1KV 50A 3-Pin(2+Tab) TO-204AE

SOT-23

IXGM25N100A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AE
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 35
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Reverse Recovery Time 200ns
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 50A
Power Dissipation-Max (Abs) 200W
Turn On Time 350 ns
Test Condition 800V, 25A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 25A
Turn Off Time-Nom (toff) 1520 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 100ns/500ns
Switching Energy 5mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 4 V
Gate-Emitter Thr Voltage-Max 5V
Power Dissipation Ambient-Max 200W
RoHS Status ROHS3 Compliant

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