IXGN120N60A3D1

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Manufacturer part number:IXGN120N60A3D1

Manufacturer:IXYS

Description:IGBT MOD 600V 200A 595W SOT227B

Case Package:SOT-23

Datasheet:IXGN120N60A3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2009
Series	GenX3™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	LOW CONDUCTION LOSS, UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	595W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	IXG*120N60
Pin Count	4
JESD-30 Code	R-PUFM-X4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Turn On Delay Time	39 ns
Power - Max	595W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	410 ns
Collector Emitter Voltage (VCEO)	1.35V
Max Collector Current	200A
Current - Collector Cutoff (Max)	650μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	14.8nF
Turn On Time	123 ns
Vce(on) (Max) @ Vge, Ic	1.35V @ 15V, 100A
Turn Off Time-Nom (toff)	830 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	14.8nF @ 25V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free