IXKP10N60C5

new-10%

Manufacturer part number:IXKP10N60C5

Manufacturer:IXYS

Description:MOSFET N-CH 600V 10A TO220AB

Case Package:SOT-23

Datasheet:IXKP10N60C5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	CoolMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	109W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	385m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 100V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	10A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	600A
Drain-source On Resistance-Max	0.385Ohm
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	225 mJ
FET Feature	Super Junction
RoHS Status	ROHS3 Compliant