IXKP13N60C5M

new-10%

Manufacturer part number:IXKP13N60C5M

Manufacturer:IXYS

Description:MOSFET N-CH 600V 6.5A TO220FP

Case Package:SOT-23

Datasheet:IXKP13N60C5M Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	32W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id	3.5V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6.5A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	6.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.3Ohm
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	290 mJ
FET Feature	Super Junction
RoHS Status	ROHS3 Compliant