IXSN52N60AU1

new-10%

Manufacturer part number:IXSN52N60AU1

Manufacturer:IXYS

Description:IGBT FRD 600V 80A SCSOA SOT227B

Case Package:SOT-23

Datasheet:IXSN52N60AU1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Current - Collector Cutoff (Max)	750μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	4.5nF
Turn On Time	290 ns
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 40A
Turn Off Time-Nom (toff)	790 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	4.5nF @ 25V
VCEsat-Max	3 V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	RoHS Compliant