IXTA08N100D2HV

new-10%

Manufacturer part number:IXTA08N100D2HV

Manufacturer:IXYS

Description:MOSFET N-CH

Case Package:SOT-23

Datasheet:IXTA08N100D2HV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2008
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	2
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	60W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21 Ω @ 400mA, 0V
Vgs(th) (Max) @ Id	4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	325pF @ 25V
Current - Continuous Drain (Id) @ 25°C	800mA Tj
Gate Charge (Qg) (Max) @ Vgs	14.6nC @ 5V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	0V
Vgs (Max)	±20V
FET Feature	Depletion Mode
RoHS Status	RoHS Compliant