IXTA1N100P

new-10%

Manufacturer part number:IXTA1N100P

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 1A TO-263

Case Package:SOT-23

Datasheet:IXTA1N100P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	Polar™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	331pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1A Tc
Gate Charge (Qg) (Max) @ Vgs	15.5nC @ 10V
Rise Time	26ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	1.8A
Avalanche Energy Rating (Eas)	100 mJ
RoHS Status	ROHS3 Compliant