IXTA8N50P

new-10%

Manufacturer part number:IXTA8N50P

Manufacturer:IXYS

Description:Transistor: N-MOSFET; unipolar; 500V; 8A; 150W; TO263; 400ns

Case Package:SOT-23

Datasheet:IXTA8N50P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	8A
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	400 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free