IXTN600N04T2 Description

IXTN600N04T2 is a 40V TrenchT2™ GigaMOS™ Power MOSFET. A power MOSFET is a specific metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to the degree that the gate voltage needs to be higher than the voltage under control.

IXTN600N04T2 Features

International Standard Package

miniBLOC, with Aluminium Nitride Isolation

175°C Operating Temperature

Isolation Voltage 2500 V~ z High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low RDS(on)

IXTN600N04T2 Applications

DC-DC Converters and Off-Line UPS

Primary-Side Switch

High-Speed Power Switching Applications