IXTP05N100M

new-10%

Manufacturer part number:IXTP05N100M

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 700MA TO-220

Case Package:SOT-23

Datasheet:IXTP05N100M Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	17 Ω @ 375mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	700mA Tc
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	700mA
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	0.7A
Pulsed Drain Current-Max (IDM)	3A
DS Breakdown Voltage-Min	1000V
Avalanche Energy Rating (Eas)	100 mJ
RoHS Status	ROHS3 Compliant