IXTP102N15T

new-10%

Manufacturer part number:IXTP102N15T

Manufacturer:IXYS

Description:MOSFET N-CH 150V 102A TO-220

Case Package:SOT-23

Datasheet:IXTP102N15T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	455W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	455W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5220pF @ 25V
Current - Continuous Drain (Id) @ 25°C	102A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	102A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.018Ohm
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	750 mJ
RoHS Status	ROHS3 Compliant