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IXTQ3N150M

  • IXTQ3N150M
  • IXTQ3N150M

IXTQ3N150M

IXTQ3N150M

IXYS

DISCMOSFET N-CH STD-HIVOLTAGE TO

SOT-23

IXTQ3N150M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 73W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1375pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.83A Tc
Gate Charge (Qg) (Max) @ Vgs 38.6nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.53000 $7.53
500 $7.4547 $3727.35
1000 $7.3794 $7379.4
1500 $7.3041 $10956.15
2000 $7.2288 $14457.6
2500 $7.1535 $17883.75

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