IXTQ60N10T

new-10%

Manufacturer part number:IXTQ60N10T

Manufacturer:IXYS

Description:DISCMSFT NCHTRENCHGATE-GEN1 TO-3

Case Package:SOT-23

Datasheet:IXTQ60N10T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	compliant
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	176W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	2650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	60A
Drain-source On Resistance-Max	0.018Ohm
Pulsed Drain Current-Max (IDM)	180A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	RoHS Compliant