IXTT30N50L2

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IXTT30N50L2

Manufacturer part number:IXTT30N50L2

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXTT30N50L2 MOSFET Transistor, LINEAR L2, N Channel, 30 A, 500 V, 200 mohm, 10 V, 2.5 V

Case Package:SOT-23

Datasheet:IXTT30N50L2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	Linear L2™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	400W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	30A
Threshold Voltage	2.5V
Drain-source On Resistance-Max	0.2Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	1500 mJ
Nominal Vgs	2.5 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant