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IXTV200N10TS

IXTV200N10TS

IXTV200N10TS

IXYS

MOSFET N-CH 100V 200A PLUS220SMD

SOT-23

IXTV200N10TS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PLUS-220SMD
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchMV™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 550W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 550W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 200A
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status RoHS Compliant

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