IXTX17N120L

new-10%

Manufacturer part number:IXTX17N120L

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 17A PLUS247

Case Package:SOT-23

Datasheet:IXTX17N120L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	700W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 8.5A, 20V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 15V
Rise Time	39ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	±30V
Fall Time (Typ)	63 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.9Ohm
Drain to Source Breakdown Voltage	1.2kV
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	ROHS3 Compliant