IXTY01N80

new-10%

Manufacturer part number:IXTY01N80

Manufacturer:IXYS

Description:MOSFET N-CH 800V 0.1A TO-252AA

Case Package:SOT-23

Datasheet:IXTY01N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100mA Tc
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	100mA
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.1A
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	0.4A
RoHS Status	ROHS3 Compliant