IXTY02N50D

new-10%

Manufacturer part number:IXTY02N50D

Manufacturer:IXYS

Description:MOSFET N-CH 500V 0.2A DPAK

Case Package:SOT-23

Datasheet:IXTY02N50D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	PURE TIN
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.1W Ta 25W Tc
Element Configuration	Single
Power Dissipation	1.1W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30 Ω @ 50mA, 0V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200mA Tc
Rise Time	4ns
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	200mA
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.2A
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	0.8A
FET Feature	Depletion Mode
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free