IXTY2N60P

new-10%

Manufacturer part number:IXTY2N60P

Manufacturer:IXYS

Description:MOSFET N-CH 600V 2A D-PAK

Case Package:SOT-23

Datasheet:IXTY2N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	Polar™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	55W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	55W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.1 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	2A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	4A
Avalanche Energy Rating (Eas)	150 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free