IXUC200N055

new-10%

Manufacturer part number:IXUC200N055

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXUC200N055 MOSFET Transistor, N Channel, 200 A, 55 V, 5.1 mohm, 10 V, 4 V

Case Package:SOT-23

Datasheet:IXUC200N055 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS220™
Number of Pins	220
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	35
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 2mA
Current - Continuous Drain (Id) @ 25°C	200A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	115ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	155 ns
Turn-Off Delay Time	230 ns
Continuous Drain Current (ID)	200A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0051Ohm
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	500 mJ
Isolation Voltage	2.5kV
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant