IXXH60N65C4

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Manufacturer part number:IXXH60N65C4

Manufacturer:IXYS

Description:IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT

Case Package:SOT-23

Datasheet:IXXH60N65C4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2014
Series	GenX4™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	455W
Element Configuration	Single
Power Dissipation	455W
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	118A
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.8V
Test Condition	400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 60A
IGBT Type	PT
Gate Charge	94nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	37ns/133ns
Switching Energy	3.2mJ (on), 830μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant