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IXZR16N60A-00

IXZR16N60A-00

IXZR16N60A-00

IXYS

IXZR16N60A-00 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IXYS stock available on our website

SOT-23

IXZR16N60A-00 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.29.00.95
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 18
Maximum Drain Source Resistance (mOhm) 530(Typ)@20V
Typical Gate Charge @ Vgs (nC) 42@10V
Typical Input Capacitance @ Vds (pF) 2040@480V
Typical Reverse Transfer Capacitance @ Vds (pF) 20@480V
Typical Output Capacitance @ Vds (pF) 160@480V
Maximum Power Dissipation (mW) 3000
Typical Turn-Off Delay Time (ns) 4
Typical Turn-On Delay Time (ns) 4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Supplier Package ISOPLUS 247
Military No
Mounting Through Hole
Package Height 21.34(Max)
Package Length 16.13(Max)
Package Width 5.21(Max)
PCB changed 3
Tab Tab
Lead Shape Through Hole
Type MOSFET
Pin Count 3
Configuration Single
Channel Type N

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