MIO1200-33E10

new-10%

Manufacturer part number:MIO1200-33E10

Manufacturer:IXYS

Description:MOD IGBT SGL SWITCH 3300V E10

Case Package:SOT-23

Datasheet:MIO1200-33E10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E10
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
Subcategory	Insulated Gate BIP Transistors
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MIO
Pin Count	9
JESD-30 Code	R-XUFM-X9
Number of Elements	3
Configuration	Single Switch
Case Connection	ISOLATED
Turn On Delay Time	400 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	1.07 μs
Collector Emitter Voltage (VCEO)	3.1V
Max Collector Current	1.2kA
Current - Collector Cutoff (Max)	120mA
Collector Emitter Breakdown Voltage	3.3kV
Voltage - Collector Emitter Breakdown (Max)	3300V
Current - Collector (Ic) (Max)	1200A
Input Capacitance	187nF
Turn On Time	600 ns
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 1200A
Turn Off Time-Nom (toff)	1510 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	187nF @ 25V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free