MMIX1Y100N120C3H1

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Manufacturer part number:MMIX1Y100N120C3H1

Manufacturer:IXYS

Description:IGBT Modules SMPD IGBTs Power Device

Case Package:SOT-23

Datasheet:MMIX1Y100N120C3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	24
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	400W
Element Configuration	Single
Input Type	Standard
Power - Max	400W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.5V
Max Collector Current	92A
Reverse Recovery Time	420 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 100A
Gate Charge	270nC
Current - Collector Pulsed (Icm)	440A
Td (on/off) @ 25°C	48ns/123ns
Switching Energy	6.5mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	5.7mm
Length	25.25mm
Width	23.25mm
RoHS Status	ROHS3 Compliant