MMIX1Y82N120C3H1

new-10%

Manufacturer part number:MMIX1Y82N120C3H1

Manufacturer:IXYS

Description:DISC IGBT SMPD PKG-STANDARD SMPD

Case Package:SOT-23

Datasheet:MMIX1Y82N120C3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Surface Mount	YES
Operating Temperature	-55°C~150°C TJ
Part Status	Active
Subcategory	Insulated Gate BIP Transistors
Input Type	Standard
Power - Max	320W
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	78ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	78A
Power Dissipation-Max (Abs)	320W
Test Condition	600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 82A
IGBT Type	PT
Gate Charge	215nC
Current - Collector Pulsed (Icm)	320A
Td (on/off) @ 25°C	29ns/192ns
Switching Energy	4.95mJ (on), 2.78mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V