MUBW50-12A8

new-10%

Manufacturer part number:MUBW50-12A8

Manufacturer:IXYS

Description:IGBT MODULE 1200V 85A 350W E3

Case Package:SOT-23

Datasheet:MUBW50-12A8 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	24
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	350W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MUBW
Pin Count	24
JESD-30 Code	R-XUFM-X24
Qualification Status	Not Qualified
Number of Elements	7
Configuration	Three Phase Inverter with Brake
Case Connection	ISOLATED
Power - Max	350W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	85A
Current - Collector Cutoff (Max)	3.7mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Reverse Voltage	1.6kV
Input Capacitance	3.3nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 50A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.3nF @ 25V
RoHS Status	ROHS3 Compliant