MWI100-12E8

new-10%

Manufacturer part number:MWI100-12E8

Manufacturer:IXYS

Description:MOD IGBT SIXPACK RBSOA 1200V E3

Case Package:SOT-23

Datasheet:MWI100-12E8 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
Terminal Finish	Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	640W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MWI
Pin Count	19
JESD-30 Code	R-XUFM-X11
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	640W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	165A
Current - Collector Cutoff (Max)	1.4mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7.4nF
Turn On Time	345 ns
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 100A
Turn Off Time-Nom (toff)	795 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	7.4nF @ 25V
RoHS Status	RoHS Compliant