MWI150-12T8T

new-10%

Manufacturer part number:MWI150-12T8T

Manufacturer:IXYS

Description:IGBT MODULE 1200V 215A 690W E3

Case Package:SOT-23

Datasheet:MWI150-12T8T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Published	2008
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	13
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	690W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MWI
Pin Count	35
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	690W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	215A
Current - Collector Cutoff (Max)	6mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	10.77nF
Turn On Time	320 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 150A
Turn Off Time-Nom (toff)	840 ns
IGBT Type	Trench
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	10.77nF @ 25V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free