MWI60-12T6K

new-10%

Manufacturer part number:MWI60-12T6K

Manufacturer:IXYS

Description:MOD IGBT SIXPACK RBSOA 1200V E1

Case Package:SOT-23

Datasheet:MWI60-12T6K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	E1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2007
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	13
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MWI
Pin Count	24
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	58A
Current - Collector Cutoff (Max)	500μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.53nF
Turn On Time	140 ns
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 35A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2.53nF @ 25V
RoHS Status	ROHS3 Compliant