MWI75-12E8

new-10%

Manufacturer part number:MWI75-12E8

Manufacturer:IXYS

Description:Trans IGBT Module N-CH 1.2KV 130A 33-Pin Case E-3

Case Package:SOT-23

Datasheet:MWI75-12E8 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
Terminal Finish	Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	500W
Terminal Position	UPPER
Terminal Form	PIN/PEG
Base Part Number	MWI
Pin Count	19
JESD-30 Code	R-XUFM-P11
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	500W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	130A
Current - Collector Cutoff (Max)	1.1mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	5.7nF
Turn On Time	210 ns
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 75A
Turn Off Time-Nom (toff)	730 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	5.7nF @ 25V
RoHS Status	RoHS Compliant