IXZ308N120

new-10%

Manufacturer part number:IXZ308N120

Manufacturer:IXYS-RF

Description:IXYS RF IXZ308N120 RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375

Case Package:SOT-23

Datasheet:IXZ308N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Package / Case	6-SMD, Flat Lead Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Packaging	Tube
Published	2004
Series	Z-MOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Operating Temperature	175°C
Voltage - Rated	1200V
Max Power Dissipation	880W
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Frequency	65MHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Transistor Application	SWITCHING
Rise Time	5ns
Drain to Source Voltage (Vdss)	1.2kV
Transistor Type	N-Channel
Continuous Drain Current (ID)	8A
Gain	23dB
Drain Current-Max (Abs) (ID)	8A
DS Breakdown Voltage-Min	1200V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance	2.1Ohm
Voltage - Test	100V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant