TC58BVG0S3HBAI6

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Manufacturer part number:TC58BVG0S3HBAI6

Manufacturer:Kioxia America, Inc.

Description:Benand? Memory IC Benand? Series 8mm mm

Case Package:SOT-23

Datasheet:TC58BVG0S3HBAI6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	67-VFBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Series	Benand™
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	67
Technology	FLASH - NAND (SLC)
Voltage - Supply	2.7V~3.6V
Terminal Position	BOTTOM
Number of Functions	1
Supply Voltage	3.3V
Terminal Pitch	0.8mm
JESD-30 Code	R-PBGA-B67
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	1Gb 128M x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Memory Format	FLASH
Memory Interface	Parallel
Organization	128MX8
Memory Width	8
Write Cycle Time - Word, Page	25ns
Memory Density	1073741824 bit
Programming Voltage	3.3V
Height Seated (Max)	1mm
Length	8mm
Width	6.5mm
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$2.583553	$2.583553
10	$2.437314	$24.37314
100	$2.299353	$229.9353
500	$2.169201	$1084.6005
1000	$2.046416	$2046.416

TC58BVG0S3HBAI6 Overview

A Non-Volatile-type memory can be classified as the memory type of this device. Case Tray is available. There is a 67-VFBGA case embedded in it. It is estimated that the memory size on the chip is 1Gb 128M x 8. FLASH-format memory is used in this device, which is a mainstream design. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. There is a recommendation that Surface Mount mounting type should be used for this product. The chip has 67 terminations. The part supports at least 1 functions to ensure a comprehensive working process. In order to operate this memory device, it must be supplied with 3.3V of power. Among the Benand? series of memory devices, this part is essential for its applications. A programming voltage of 3.3V is required to alter the state of certain nonvolatile memory arrays.