TC58BYG1S3HBAI4

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Manufacturer part number:TC58BYG1S3HBAI4

Manufacturer:Kioxia America, Inc.

Description:Benand? Memory IC Benand? Series 11mm mm

Case Package:SOT-23

Datasheet:TC58BYG1S3HBAI4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	63-VFBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Series	Benand™
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	63
Technology	FLASH - NAND (SLC)
Voltage - Supply	1.7V~1.95V
Terminal Position	BOTTOM
Terminal Form	BALL
Number of Functions	1
Supply Voltage	1.8V
Terminal Pitch	0.8mm
JESD-30 Code	R-PBGA-B63
Supply Voltage-Max (Vsup)	1.95V
Supply Voltage-Min (Vsup)	1.7V
Memory Size	2Gb 256M x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Memory Format	FLASH
Organization	256MX8
Memory Width	8
Write Cycle Time - Word, Page	25ns
Memory Density	2147483648 bit
Parallel/Serial	PARALLEL
Programming Voltage	1.8V
Height Seated (Max)	1mm
Length	11mm
Width	9mm
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$23.201280	$23.20128
10	$21.888000	$218.88
100	$20.649057	$2064.9057
500	$19.480242	$9740.121
1000	$18.377587	$18377.587

TC58BYG1S3HBAI4 Overview

Its memory type can be classified as Non-Volatile. There is a Tray case available. It is available in 63-VFBGA case. This chip has an 2Gb 256M x 8 size of memory on it, so a lot of data can be stored on it. This device uses takes advantage of the FLASH format. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~85°C TA. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. There are 63 terminations on the chip. The comprehensive working procedure of this part involves 1 functions. The memory device is designed to be supplied with an 1.8V volt power supply in order to operate properly. Benand? series memory devices play an important role in the applications they target. The programming voltage required for certain nonvolatile memory arrays is 1.8V.