TC58BYG2S0HBAI4

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Manufacturer part number:TC58BYG2S0HBAI4

Manufacturer:Kioxia America, Inc.

Description:Benand? Memory IC Benand? Series 11mm mm

Case Package:SOT-23

Datasheet:TC58BYG2S0HBAI4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	63-VFBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Series	Benand™
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	63
Technology	FLASH - NAND (SLC)
Voltage - Supply	1.7V~1.95V
Terminal Position	BOTTOM
Number of Functions	1
Supply Voltage	1.8V
Terminal Pitch	0.8mm
JESD-30 Code	R-PBGA-B63
Supply Voltage-Max (Vsup)	1.95V
Supply Voltage-Min (Vsup)	1.7V
Memory Size	4G 512M x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Memory Format	FLASH
Memory Interface	Parallel
Organization	512MX8
Memory Width	8
Write Cycle Time - Word, Page	25ns
Memory Density	4294967296 bit
Programming Voltage	1.8V
Height Seated (Max)	1mm
Length	11mm
Width	9mm
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$4.798000	$4.798
10	$4.526415	$45.26415
100	$4.270203	$427.0203
500	$4.028493	$2014.2465
1000	$3.800465	$3800.465

TC58BYG2S0HBAI4 Overview

There is a Non-Volatile memory type associated with this device. It is available in a case with a Tray shape. It is available in 63-VFBGA case. On the chip, there is an 4G 512M x 8 memory, which is the size of the chip's memory. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. The chip contains 63 terminations. The part supports at least 1 functions to ensure a comprehensive working process. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. Its target applications rely heavily on the Benand? series memory devices. A programming voltage of 1.8V is required to change a nonvolatile memory array's state.