TH58BYG3S0HBAI6

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Manufacturer part number:TH58BYG3S0HBAI6

Manufacturer:Kioxia America, Inc.

Description:Benand? Memory IC Benand? Series 8mm mm

Case Package:SOT-23

Datasheet:TH58BYG3S0HBAI6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	67-VFBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Series	Benand™
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	67
Technology	FLASH - NAND (SLC)
Voltage - Supply	1.7V~1.95V
Terminal Position	BOTTOM
Terminal Form	BALL
Number of Functions	1
Supply Voltage	1.8V
Terminal Pitch	0.8mm
JESD-30 Code	R-PBGA-B67
Supply Voltage-Max (Vsup)	1.95V
Supply Voltage-Min (Vsup)	1.7V
Memory Size	8Gb 1G x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Memory Format	FLASH
Organization	1GX8
Memory Width	8
Write Cycle Time - Word, Page	25ns
Memory Density	8589934592 bit
Parallel/Serial	PARALLEL
Programming Voltage	1.8V
Height Seated (Max)	1mm
Length	8mm
Width	6.5mm
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$7.772000	$7.772
10	$7.332075	$73.32075
100	$6.917052	$691.7052
500	$6.525521	$3262.7605
1000	$6.156152	$6156.152

TH58BYG3S0HBAI6 Overview

As far as its memory type goes, it falls into the Non-Volatile category. In addition, memory ics is available in a Tray case as well. Embedded in the 67-VFBGA case, memory ics is a single file. This chip has an 8Gb 1G x 8 size of memory on it, so a lot of data can be stored on it. This device utilizes a FLASH format memory which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. Its recommended mounting type is Surface Mount. 67 terminations are planted on the chip. For a comprehensive working procedure, this part supports as many as 1 functions. In order to power this memory device, 1.8V will be necessary. Benand? series memory ics play a crucial role in the target applications of this part. Nonvolatile memory arrays require 1.8V programming voltages to change their states.