PIN - Single 0.03pF @ 5V 1MHz -65°C~125°C TJ 2 Terminations SILICON NOT SPECIFIED DUAL Bulk
SOT-23
MA4AGBLP912 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-65°C~125°C TJ
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Type
Switch
HTS Code
8541.10.00.80
Subcategory
PIN Diodes
Technology
NEGATIVE-INTRINSIC-POSITIVE
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
R-XDMW-F2
Qualification Status
Not Qualified
Number of Elements
1
Max Current Rating
40mA
Diode Type
PIN - Single
Capacitance @ Vr, F
0.03pF @ 5V 1MHz
Voltage - Peak Reverse (Max)
50V
Breakdown Voltage-Min
50V
Reverse Test Voltage
5V
Frequency Band
X B
Diode Capacitance-Nom
0.02pF
Resistance @ If, F
4.9Ohm @ 20mA 1GHz
Diode Capacitance-Max
0.03pF
Minority Carrier Lifetime-Nom
0.005 µs
Diode Res Test Current
20mA
Diode Res Test Frequency
10000MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$4.95800
$495.8
300
$4.55600
$1366.8
500
$4.15400
$2077
1,000
$3.75200
$3.752
MA4AGBLP912 Product Details
MA4AGBLP912 Overview
Device specifications specify a maximum reverse voltage of 50V for this device.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 50V.RF diode is necessary to have a reverse test voltage wRF diodehin 5V in order to obtain a valid conversion result.
MA4AGBLP912 Features
at its lowest breakdown voltage of 50V
MA4AGBLP912 Applications
There are a lot of M/A-Com Technology Solutions MA4AGBLP912 applications of RF diodes.