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MA4E2502L-1246

MA4E2502L-1246

MA4E2502L-1246

M/A-Com Technology Solutions

Schottky 0.12pF @ 0V 18GHz -40°C~125°C TJ 2 Terminations SILICON BOTTOM Bulk Die

SOT-23

MA4E2502L-1246 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case Die
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2009
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.60
Subcategory Microwave Mixer Diodes
Terminal Position BOTTOM
Pin Count 2
Number of Elements 1
Max Current Rating 20mA
Power Dissipation-Max 50mW
Element Configuration Single
Diode Type Schottky
Forward Current 20mA
Forward Voltage 300mV
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 5V
Capacitance @ Vr, F 0.12pF @ 0V 18GHz
Operating Frequency-Max 18GHz
Frequency Band KU B
Type of Schottky Barrier LOW BARRIER
Pulsed Input Power-Max 0.1W
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $2.97250 $297.25
300 $2.68250 $804.75
500 $2.40700 $1203.5
1,000 $2.03000 $2.03
2,500 $1.92850 $3.857
5,000 $1.85600 $9.28
MA4E2502L-1246 Product Details

MA4E2502L-1246 Overview


RF diode is recommended that the system's forward voltage is kept above 300mV.

MA4E2502L-1246 Features




MA4E2502L-1246 Applications


There are a lot of M/A-Com Technology Solutions
MA4E2502L-1246 applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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