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DA2F75N12S

DA2F75N12S

DA2F75N12S

MagnaChip Semiconductor

SOT-23

DA2F75N12S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 960
Peak Reverse Repetitive Voltage (V) 1200
Maximum Continuous Forward Current (A) 150
Peak Non-Repetitive Surge Current (A) 1500
Peak Forward Voltage (V) 2.2@75A
Peak Reverse Current (uA) 3000
Maximum Power Dissipation (mW) 200000
Peak Reverse Recovery Time (ns) 130
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 5DM-1
Military No
Mounting Screw
Package Height 22.95(Max)
Package Length 94
Package Width 27.5
PCB changed 3
Part StatusObsolete
Type Switching Diode
Pin Count3
Configuration Dual Common Cathode
RoHS StatusSupplier Unconfirmed
In-Stock:4357 items

DA2F75N12S Product Details

DA2F75N12S Overview


In accordance with the datasheets, the forward peak voltage is [email protected] 150 is the maximum continuous forward current consumed by this device at any given time.The DC reverse voltage used for operation must be less than 960.

DA2F75N12S Features


the forward peak voltage is 2.2@75A


DA2F75N12S Applications


There are a lot of MagnaChip Semiconductor
DA2F75N12S applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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