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DAC2F150N4S

DAC2F150N4S

DAC2F150N4S

MagnaChip Semiconductor

SOT-23

DAC2F150N4S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 320
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 300
Peak Non-Repetitive Surge Current (A) 2750
Peak Forward Voltage (V) 1.3@150A
Peak Reverse Current (uA) 1000
Maximum Power Dissipation (mW) 500000
Peak Reverse Recovery Time (ns) 130
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 5DM-1
Military No
Mounting Screw
Package Height 22.95(Max)
Package Length 94
Package Width 27.5
PCB changed 3
Part StatusActive
Type Switching Diode
Pin Count3
Configuration Dual Common Cathode
RoHS StatusSupplier Unconfirmed
In-Stock:2937 items

DAC2F150N4S Product Details

DAC2F150N4S Overview


According to the datasheets, the peak forward voltage is 1.3@150A volts.RF diode consumes approximately 300 in continuous forward current at any given moment.For operation, a DC reverse voltage less than 320 must be applied.

DAC2F150N4S Features


the forward peak voltage is 1.3@150A


DAC2F150N4S Applications


There are a lot of MagnaChip Semiconductor
DAC2F150N4S applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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