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DBC2F150N6S

DBC2F150N6S

DBC2F150N6S

MagnaChip Semiconductor

SOT-23

DBC2F150N6S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 480
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 300
Peak Non-Repetitive Surge Current (A) 2750
Peak Forward Voltage (V) 1.7@150A
Peak Reverse Current (uA) 6000
Maximum Power Dissipation (mW) 550000
Peak Reverse Recovery Time (ns) 200
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 5DM-2
Military No
Mounting Screw
Package Height 29.75(Max)
Package Length 93
Package Width 35
PCB changed 3
Part StatusObsolete
Type Switching Diode
Pin Count3
Configuration Dual Common Cathode
RoHS StatusSupplier Unconfirmed
In-Stock:2242 items

DBC2F150N6S Product Details

DBC2F150N6S Overview


The peak forward voltage on the datasheets is [email protected], this device consumes about 300 of continuous forward current.During operation, DC reverse voltage must not exceed 480.

DBC2F150N6S Features


the forward peak voltage is 1.7@150A


DBC2F150N6S Applications


There are a lot of MagnaChip Semiconductor
DBC2F150N6S applications of RF diodes.


  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer

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