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DL2F90N4S

DL2F90N4S

DL2F90N4S

MagnaChip Semiconductor

SOT-23

DL2F90N4S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 320
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 180
Peak Non-Repetitive Surge Current (A) 1575
Peak Forward Voltage (V) 1.4@90A
Peak Reverse Current (uA) 1000
Maximum Power Dissipation (mW) 310000
Peak Reverse Recovery Time (ns) 80
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 6DM-2
Military No
Mounting Through Hole
Package Height 34
Package Length 66
Package Width 8.15(Max)
PCB changed 6
Part StatusObsolete
Type Switching Diode
Pin Count6
Configuration Dual
RoHS StatusSupplier Unconfirmed
In-Stock:2803 items

DL2F90N4S Product Details

DL2F90N4S Overview


The datasheets indicate that the peak forward voltage is [email protected] any given time, this device consumes about 180 continuous forward current.The DC reverse voltage must be less than 320.

DL2F90N4S Features


the forward peak voltage is 1.4@90A


DL2F90N4S Applications


There are a lot of MagnaChip Semiconductor
DL2F90N4S applications of RF diodes.


  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes

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